| PART |
Description |
Maker |
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8322ZV18B-250 GS8322ZV18E-150I GS8322ZV18GB-150 |
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8322Z18 |
(GS8322Z18 - GS8322Z72) 36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| GS8320ZV36T-200 GS8320ZV36T-133 GS8320ZV36T-133I G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 6.5 ns, PQFP100
1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
|
GSI Technology, Inc.
http://
|
| IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect
3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
| AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K1 |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through 256 × 18的SSRAM同步突发静态存储器。流通过
|
Austin Semiconductor, Inc
|
| GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61LF51218D-10B IS61LF51218D-10TQ IS61LF51218D-10 |
512K x 18 synchronous flow-through static RAM
256K x 32 synchronous flow-through static RAM
|
Integrated Silicon Solution Inc
|
| GS8324Z18B-225I GS8324Z18B-250I GS8324Z18B-133I GS |
225MHz 6.5ns 2M x 18 36Mb sync NBT SRAM
250MHz 6ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 2M x 18 36Mb sync NBT SRAM
166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
150MHz 10ns 2M x 18 36Mb sync NBT SRAM
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM
166MHz 7ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 1M x 36 36Mb sync NBT SRAM
150MHz 10ns 1M x 36 36Mb sync NBT SRAM
166MHz 8.5ns 1M x 36 36Mb sync NBT SRAM
200MHz 7.5ns 1M x 36 36Mb sync NBT SRAM
225MHz 6.5ns 1M x 36 36Mb sync NBT SRAM
250MHz 6ns 1M x 36 36Mb sync NBT SRAM
|
GSI Technology
|
| IS61VPS204818A |
1MB x 36/ 2Mb x 18 36Mb SYNCHRONOUS PIPELINED / SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
